unisonic technologies co., ltd 4N60Z power m o sfet www.unisonic.com.tw 1 of 8 copyright ? 2012 unisonic technologies co., ltd qw-r502-777.b 4a, 600v n-channel power mosfet ? descripti on t he u t c 4n6 0 z is a hi gh voltag e po w e r mosf et and is desig ne d to have better ch aracteristics, such as fast sw itc h in g time, lo w gate charg e , lo w on-state res i stance an d h a v e a hig h rugg ed av ala n che ch aracteri stics. t h is po w e r mosf et is usua ll y used at hi gh s pee d s w itch ing app licati ons i n po w e r sup p li e s, pw m motor controls , high effici ent dc to dc c onverters and bridg e circuits. ? features * r ds (on) = 2 . 5 ? @v gs = 10 v * ultra lo w gat e char ge ( t y p i cal 15 n c ) * lo w r e verse t r ansfer capa citance ( c rs s = ty p i cal 8. 0 pf ) * fast s w itchi n g cap abi lit y * avala n che e nerg y sp ecifie d * improved dv/ d t capa bil i t y , h i gh ru gg edn es s ? sy mbol to-220 f 1 ? or de r ing i n form at io n ordering n u m ber package pi n assi gn me nt packing lea d f r ee halogen free 1 2 3 4N60Z l-t f 3-t 4N60Zg-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source http://
4N60Z power m o sfet unisonic technologi es co., ltd 2 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 7 . b ? absolute maxi mu m ra ting s (t c = 25 , unle ss other w i s e specifie d) paramet er symbol rat i ngs unit drain-s ource voltag e v ds s 600 v gate-source voltage v gss 20 v avala n che c u r r ent (note 2) i ar 4.4 a drain current contin uo us i d 4.0 a pulse d (note 2 ) i dm 16 a avalanche energy singl e puls ed ( note 3) e as 260 mj repetitiv e (not e 2) e ar 10.6 mj peak di ode r e cover y dv/dt (n ote 4) dv/dt 4.5 v/ns po w e r diss i pat ion p d 36 w junctio n t e mperature t j + 150 operatin g t e mperatur e t opr -55 ~ + 150 storage t e mperature t st g -55 ~ + 150 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitiv e rati ng : pulse w i dth lim ited b y m a xim u m juncti on temperature 3. l = 30mh, i as = 4 a , v dd = 5 0 v, r g = 25 ? , starting t j = 25c 4. i sd 4.4a, di/dt 200a/ s, v dd bv ds s , starti ng t j = 25c ? th er mal dat a paramet er symbol rat i ngs unit junction to ambient ja 62.5 /w junction to case jc 3.47 /w
4N60Z power m o sfet unisonic technologi es co., ltd 3 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 7 . b ? electric al ch ara cteri s tic s (t c = 25 , unless oth e r w is e specifi ed) paramet er symbol t es t conditions min t yp max unit off characteristics drain-source breakd o w n vo l t age bv ds s v gs = 0 v , i d = 250 a 600 v drain-s ource l eaka ge curr en t i ds s v ds = 600v, v gs = 0v 10 a gate-source l eaka ge curr en t fo rw ard i gss v gs = 20v, v ds = 0v 5 a reverse v gs = -20v, v ds = 0 v -5 a breakd o w n vo l t age t e mperature coefficient bv ds s / t j i d = 250 a,ref e rence d to 25c 0.6 v/ on characteristics gate t hreshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-s ource on-state resistance r ds ( on ) v gs = 10 v, i d = 2.2a 2.2 2.5 ? dynamic characteristics input cap a cita nce c iss v ds = 25v, v gs = 0v, f = 1mhz 520 670 pf output capac itance c oss 70 90 pf reverse t ransfer capacitance c rss 8 11 pf switching characteristics t urn-on delay time t d ( on ) v dd = 300v, i d = 4.0a, r g = 2 5 ? (note 1, 2) 13 35 ns t u rn-on rise t i me t r 45 100 ns t urn-off delay time t d ( off ) 25 60 ns t urn-off fall time t f 35 80 ns t o tal gate charge q g v ds = 480v,i d = 4.0a, v gs = 10v (note 1, 2) 15 20 nc gate-source c harge q gs 3.4 nc gate-drain charge q gd 7.1 nc source- dr a i n diode r a t i ngs a n d ch a r a c te ristics drain-s ource diod e f o r w ard voltage v sd v gs = 0 v , i s = 4.4a 1.4 v maximum co n t inuo us drain- source di od e fo rw ard c u rren t i s 4.4 a maximum p u lsed dr ain- source di od e fo rw ard c u rren t i sm 17.6 a reverse recover y time t r r v gs = 0 v , i s = 4.4a, di f /dt = 100 a/ s (note 1) 250 ns reverse recover y charge q rr 1.5 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
4N60Z power m o sfet unisonic technologi es co., ltd 4 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 7 . b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * d v/dt control l ed b y r g * i sd co ntrol l ed b y p u l se peri o d * d.u.t.-de vice un der test - + peak dio d e reco v e r y d v /d t t est circu i t p. w. period d= v gs (d r i ve r) i sd (d .u .t . ) i fm , b ody di od e fo rward c u rren t di /d t i rm bo dy dio de r e ve rse curre nt bo dy di ode reco very dv/dt bod y d iod e fo rwa r d voltag e dro p v dd 10v v ds (d.u.t. ) v gs = p.w. period peak dio d e r eco v e r y d v /d t w a v e fo rms
4N60Z power m o sfet unisonic technologi es co., ltd 5 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 7 . b ? test circuits and waveforms (cont.) v ds 90 % 10% v gs t d( o n) t r t d( of f ) t f s w itch ing t est circu i t sw it c h i n g w ave f o r m s 10 v charge q gs q gd q g v gs gate ch arg e t est circu i t gate charge wav e form v dd t p time bv dss i as i d( t) v ds(t ) unc l a m pe d in duc ti v e s w i t c h ing te s t circ uit unc l a m pe d in duc ti v e s w i t c h ing wav e forms
4N60Z power m o sfet unisonic technologi es co., ltd 6 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 7 . b ? ty pic al c h ara ct e ris tic s drain-source breakdown voltage, bv dss (normalized) (v) drain-source on-resistance, r ds(on) (normalized) ( ? ) 10 1 10 0.1 1 drain - to-so u rc e voltage, v ds (v) on- s tate chara c te ristics 0.1 2 gat e -sou rce volt age , v gs (v) transfe r ch ara c t e ris t i c s 46 8 1 0 150 notes: 1. v ds =50v 2. 250s p u lse test 10 1 0.1 25 5. 0 v not e s: 1. 2 50s puls e t e st 2. t c =25 v gs t op: 10v 9v 8v 7v 6v 5.5v 5 v b o ttor m :5.0v
4N60Z power m o sfet unisonic technologi es co., ltd 7 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 7 . b ? ty pic a l c h ara ct e r is tic s ( c ont.) 12 00 0 0.1 drain-sourcevoltage, v ds (v) 10 00 200 110 c iss 800 600 no t e s: 1. v gs =0v 2. f = 1mhz c iss= c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance characteristics (non-repetitive) 0 total gate charge, q g (nc) 5 15 25 note: i d =4a 8 10 12 10 6 4 2 0 v ds =120v v ds =300v v ds =4 80v 20 ga te c h a r ge ch ara c te rist ics c oss c rss 400 thermal response, jc (t) p d (w)
4N60Z power m o sfet unisonic technologi es co., ltd 8 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 7 . b ut c as s um es no r es pons i b ilit y f o r e q u ip m e n t f a ilu r e s t h a t r e s u lt f r o m u s in g p r oduc t s at v al ues t hat exceed, ev en m o m ent ar i l y , r a t ed v a l ues ( s uc h as m a x i m u m r a t i n g s , op era t i ng c o ndi t i on ra nges , o r ot her par am et er s ) l i s t ed i n pr oduc t s s pec i f i c at i ons of any and al l ut c pr oduc t s des c r i bed or c ont ai ned her ei n. ut c pr oduc t s are not des i gned f or us e i n l i f e s uppor t appl i anc es , dev i c es or s y s t em s w her e m a l f unc t i on of t hes e pr oduc t s c an be r eas ona bl y ex pec t ed t o res u l t i n per s ona l i n j u r y . re pro duc t i on i n w hol e or i n pa rt i s pr ohi bi t ed w i t hout t he pri o r w r i t t en c ons ent o f t he c o p y r i ght ow ner. t he i n f o r m at i o n pr es ent e d i n t h i s doc um en t do es not f o r m p a rt of any quo t a t i on or c ont r a c t , i s bel i e v ed t o be ac c u r a t e and r el i a bl e and m ay b e c hanged w i t hout n ot i c e.
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